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北京科技大学姜勇教授报告会

编辑:日期:2019-05-05 访问次数:18

Spin transport in ferromagnet(antiferromagnet)/heavy metal bilayers



时间:201959日(星期四),14:30-15:30

地点:曹光彪大楼东楼502会议室(计算机学院会议室)

报告人:姜   教授

邀请人:朱铁军 教授

 

报告人简介:姜勇教授,博士生导师、2005年度教育部长江学者奖励计划特聘教授、2013年度国家杰出青年基金获得者、教育部创新团队负责人。现任职务为北京市弱磁检测与应用工程技术研究中心主任、北京市弱磁检测与应用技术国际合作基地负责人。还担任《Journal of Materials Science & Technology》等八个国内外期刊编委、《太原科技大学学报》执行主编,IEEE高级会员、中国仪表功能材料分会副理事长、中国材料研究学会常务理事、中国电子学会应用磁学分会委员会委员、中国稀土学会固体科学与新材料专业委员会委员、中国金属学会功能材料分会委员会委员、中国物理学会磁学专业委员会委员等。

  至今在Nature MaterialsNature NanotechnologyNature communications等国内外学术期刊上发表SCI论文240篇,论文被他引3000余次;合作发表英文专著(章节)3本;在国际会议做特邀报告20余次;获得授权发明专利11项。主要的创新性工作集中在自旋电子材料与器件的研究方面,在自旋转矩方面的研究结果被至少10部外文专著正面引用。该结果还被收录到2005年度的《国际半导体技术蓝图》(ITRS) 中。

  

报告摘要:Spin Hall effect (SHE) that converts charge current into spin current in a heavy metal (HM) with strong spin-orbit coupling (SOC) has attracted much interest due to its practical use in technological applications. When a HM comes in contact with a ferromagnet (FM), the spin current that diffuses into the FM will modify the spin dependent transport properties such as anomalous Hall effect (AHE). On the other hand, the spin current will also exert torque on the magnetization, which is similar to spin transfer torque. The investigation and clarification of these intriguing issues are of fundamental importance for better understanding the underlying physics.

In this talk, we will briefly review the recent progress in our group on SOC, spin-orbit torque (SOT) and topological Hall effects in perpendicular magnetized FM (e.g. MnxGa)/HM structures. The sizeable SOT in the MnGa/IrMn films induced by the strong SHE of IrMn have been investigated. The IrMn layer also supplies an in-plane exchange bias field and enables nearly field-free magnetization reversal. In a antiferromagnet (AFM) Cr2O3/Heavy metal structure, a nearly 0.1% spin Hall magnetoresistance (SMR) ratio is achieved under a magnetic field of 9 T, which is larger than the reported value in SrMnO3/Pt structures. The antiferromagnetic Cr2O3/Ta bilayer shows negative SMR at low temperatures, which is attributed to the competition between the surface ferromagnetism and bulk antiferromagnetism of Cr2O3 (0001). We have also observed the existence of non-collinear magnetic structures and large topological Hall effect in MnGa/Pt and MnGa/Ta films induced by the strong interfacial DMI.




 
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